Verzellesi, G: search on Z-Library

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1

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Meneghesso, G., Verzellesi, G., Danesin, F., Rampazzo, F., Zanon, F., Tazzoli, A., Meneghini, M., Zanoni, E.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2008

Language:

english

File:

PDF, 1.27 MB

english, 2008

2

Gate-lag effects in AlGaAs/GaAs power HFET's

M. Borgarino, G. Sozzi, A. Mazzanti, G. Verzellesi

Journal:

Microelectronics Reliability

Year:

2001

File:

PDF, 289 KB

2001

3

Light sensitivity of current DLTS and its implications on the physics of DC-to-RF-dispersion in AlGaAs-GaAs HFETs

Verzellesi, G., Basile, A.F., Cavallini, A., Castaldini, A., Chini, A., Canali, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 699 KB

english, 2005

4

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

Meneghesso, G., Verzellesi, G., Pierobon, R., Rampazzo, F., Chini, A., Mishra, U.K., Canali, C., Zanoni, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2004

Language:

english

File:

PDF, 694 KB

english, 2004

5

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues

G. Verzellesi, G. Meneghesso, A. Chini, E. Zanoni, C. Canali

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 658 KB

english, 2005

6

Physical investigation of trap-related effects in power HFETs and their reliability implications

Mazzanti, A., Verzellesi, G., Sozzi, G., Menozzi, R., Lanzieri, C., Canali, C.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2002

Language:

english

File:

PDF, 459 KB

english, 2002

7

Gate oxide reliability improvement related to dry local oxidation of silicon

P Bellutti, N Zorzi, G Verzellesi

Journal:

Microelectronics Reliability

Year:

1999

Language:

english

File:

PDF, 457 KB

english, 1999

8

[IEEE 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 - Vienna, Austria (15-16 Nov. 2001)] 2001 International Symposium on Electron Devices for Microwave and Optoelectronic Applications. EDMO 2001 (Cat. No.01TH8567) - Dependence of impact ionization and kink on surface-deep-level dynamics in AlGaAs/GaAs HFETs

Mazzanti, A., Verzellesi, G., Vicini, L., Canali, C., Chini, A., Meneghesso, G., Zanoni, E., Lanzieri, C.

Year:

2001

Language:

english

File:

PDF, 426 KB

english, 2001

9

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - A new experimental technique for extracting base resistance and characterizing current crowding phenomena in bipolar transistors

Verzellesi,, Vendrame,, Turetta,, Pavan,, Chantre,, Marty,, Cavone,, Rivoir,, Zanoni,

Year:

1992

Language:

english

File:

PDF, 312 KB

english, 1992

10

Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors

A. Cavallini, G. Verzellesi, A. F. Basile, C. Canali, A. Castaldini, E. Zanoni

Year:

2003

Language:

english

File:

PDF, 406 KB

english, 2003

11

The Role of Carbon Doping on Breakdown, Current Collapse, and Dynamic On‐Resistance Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates

Zagni, Nicolò, Chini, Alessandro, Puglisi, Francesco Maria, Pavan, Paolo, Verzellesi, Giovanni

Journal:

physica status solidi (a)

Year:

2019

File:

PDF, 2.30 MB

2019

12

Insights into the off-state breakdown mechanisms in power GaN HEMTs

Zagni, N., Puglisi, F.M., Pavan, P., Chini, A., Verzellesi, G.

Journal:

Microelectronics Reliability

Year:

2019

Language:

english

File:

PDF, 957 KB

english, 2019

13

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

Verzellesi, Giovanni, Morassi, Luca, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, Pozzovivo, Gianmauro, Lavanga, Simone, Detzel, Thomas, Haberlen, Oliver, Curatola, Gilberto

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.40 MB

english, 2014

14

[IEEE Proceedings of IEEE International Electron Devices Meeting - San Francisco, CA, USA (1989.12.3-1989.12.6)] International Technical Digest on Electron Devices Meeting - Measurements and simulation of avalanche breakdown in advanced Si bipolar transistors

Zanoni,, Crabbe,, Stork,, Pavan,, Verzellesi,, Vendrame,, Canali,

Year:

1992

Language:

english

File:

PDF, 314 KB

english, 1992

15

Errors Limiting Split- Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs

Morassi, L., Verzellesi, G., Han Zhao, Lee, J.C., Veksler, D., Bersuker, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2012

Language:

english

File:

PDF, 564 KB

english, 2012

16

PFM2: a 32 × 32 processor for X-ray diffraction imaging at FELs

Manghisoni, M., Fabris, L., Re, V., Traversi, G., Ratti, L., Grassi, M., Lodola, L., Malcovati, P., Vacchi, C., Pancheri, L., Benkechcache, M. E. A., Betta, G.-F. Dalla, Xu, H., Verzellesi, G., Ronchi

Journal:

Journal of Instrumentation

Year:

2016

Language:

english

File:

PDF, 1.25 MB

english, 2016

17

Development of a detector-compatible JFET technology on high-resistivity silicon

G.F.Dalla Betta, M. Boscardin, G.U. Pignatel, G. Verzellesi, L. Bosisio, L. Ferrario, M. Zen, G. Soncini

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1998

Language:

english

File:

PDF, 104 KB

english, 1998

18

Monolithic integration of detectors and transistors on high-resistivity silicon

Gian-Franco Dalla Betta, Giovanni Batignani, Maurizio Boscardin, Luciano Bosisio, Paolo Gregori, Lucio Pancheri, Claudio Piemonte, Lodovico Ratti, Giovanni Verzellesi, Nicola Zorzi

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2007

Language:

english

File:

PDF, 224 KB

english, 2007

19

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

M. Faqir, G. Verzellesi, F. Fantini, F. Danesin, F. Rampazzo, G. Meneghesso, E. Zanoni, A. Cavallini, A. Castaldini, N. Labat, A. Touboul, C. Dua

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 170 KB

english, 2007

20

SPICE modelling of impact ionisation effects in silicon bipolar transistors

Verzellesi, G., Dal Fabbro, A., Pavan, P., Vendrame, L., Zabotto, E., Zanini, A., Chantre, A., Zanoni, E.

Journal:

IEE Proceedings - Circuits Devices and Systems

Year:

1996

Language:

english

File:

PDF, 944 KB

english, 1996

21

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

Faqir, M., Verzellesi, G., Chini, A., Fantini, F., Danesin, F., Meneghesso, G., Zanoni, E., Dua, C.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2008

Language:

english

File:

PDF, 384 KB

english, 2008

22

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Verzellesi, Giovanni, Saguatti, Davide, Meneghini, Matteo, Bertazzi, Francesco, Goano, Michele, Meneghesso, Gaudenzio, Zanoni, Enrico

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 2.71 MB

english, 2013

23

Alpha-particle detection based on the BJT detector and simple, IC-based readout electronics

Rovati, L, Bettarini, S, Bonaiuti, M, Bosisio, L, Betta, G-F Dalla, Tyzhnevyi, V, Verzellesi, G, Zorzi, N

Journal:

Journal of Instrumentation

Year:

2009

Language:

english

File:

PDF, 2.51 MB

english, 2009

24

Design of an n-channel JFET on high-resistivity silicon for radiation-detector on-chip front-end electronics

G.F. Dalla Betta, G. Verzellesi, G.U. Pignatel, S. Amon, M. Boscardin, G. Soncini

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1995

Language:

english

File:

PDF, 744 KB

english, 1995

25

[IEEE 2008 European Microwave Integrated Circuit Conference (EuMIC) - Amsterdam, Netherlands (2008.10.27-2008.10.28)] 2008 European Microwave Integrated Circuit Conference - Characterization and Numerical Simulations of High Power Field-Plated pHEMTs

Chini, A., Esposto, M., Verzellesi, G., Lavanga, S., Lanzieri, C., Cetronio, A.

Year:

2008

Language:

english

File:

PDF, 276 KB

english, 2008

26

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements

Meneghini, Matteo, Vaccari, Simone, Lago, Matteo Dal, Marconi, Stefano, Barbato, Marco, Trivellin, Nicola, Griffoni, Alessio, Alfier, Alberto, Verzellesi, Giovanni, Meneghesso, Gaudenzio, Zanoni, Enri

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 789 KB

english, 2014

27

[IEEE 2006 European Microwave Integrated Circuits Conference - Manchester, UK (2006.09.10-2006.09.13)] 2006 European Microwave Integrated Circuits Conference - Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs

Chini, A., Lavanga, S., Peroni, M., Lanzieri, C., Cetronio, A., Teppati, V., Camarchia, V., Ghione, G., Verzellesi, G.

Year:

2006

Language:

english

File:

PDF, 656 KB

english, 2006

28

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

Marino, F.A., Bisi, D., Meneghini, M., Verzellesi, G., Zanoni, E., Van Hove, M., You, S., Decoutere, S., Marcon, D., Stoffels, S., Ronchi, N., Meneghesso, G.

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

29

Si-PIN X-ray detector technology

G.F. Dalla Betta, G.U. Pignatel, G. Verzellesi, M. Boscardin

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

1997

Language:

english

File:

PDF, 448 KB

english, 1997

30

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

M. Faqir, M. Bouya, N. Malbert, N. Labat, D. Carisetti, B. Lambert, G. Verzellesi, F. Fantini

Journal:

Microelectronics Reliability

Year:

2010

Language:

english

File:

PDF, 370 KB

english, 2010

31

Design and Characterization of Current-Assisted Photonic Demodulators in 0.18- CMOS Technology

Betta, G.D., Donati, S., Hossain, Q.D., Martini, G., Pancheri, L., Saguatti, D., Stoppa, D., Verzellesi, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 469 KB

english, 2011

32

BJT detector with FPGA-based read-out for alpha particle monitoring

Tyzhnevyi, V, Betta, G -F Dalla, Rovati, L, Verzellesi, G, Zorzi, N

Journal:

Journal of Instrumentation

Year:

2011

Language:

english

File:

PDF, 1.37 MB

english, 2011

33

First experimental results on active and slim-edge silicon sensors for XFEL

Pancheri, L., Benkechcache, M. E. A., Betta, G.-F. Dalla, Xu, H., Verzellesi, G., Ronchin, S., Boscardin, M., Ratti, L., Grassi, M., Lodola, L., Malcovati, P., Vacchi, C., Manghisoni, M., Re, V., Trav

Journal:

Journal of Instrumentation

Year:

2016

Language:

english

File:

PDF, 2.29 MB

english, 2016

34

[IEEE 2019 IEEE SENSORS - Montreal, QC, Canada (2019.10.27-2019.10.30)] 2019 IEEE SENSORS - Wireless stretchable SAW sensors based on Z-cut lithium niobate

Floer, Cecile, Hage-Ali, Sami, Verzellesi, Louis, Badie, Laurent, Elmazria, Omar, Zhgoon, Sergei

Year:

2019

Language:

english

File:

PDF, 953 KB

english, 2019

35

[IEEE 1999 IEEE Nuclear Science Symposium. Conference Record. 1999 IEEE Nuclear Science Symposium and Medical Imaging Conference - Seattle, WA, USA (24-30 Oct. 1999)] 1999 IEEE Nuclear Science Symposium. Conference Record. 1999 Nuclear Science Symposium and Medical Imaging Conference (Cat. No.99CH37019) - Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET

Fazzi, A., Pignatel, G.U., Dalla Betta, G.F., Boscardin, M., Varoli, V., Verzellesi, G.

Year:

1999

Language:

english

File:

PDF, 335 KB

english, 1999

36

Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal

Verzellesi, G., Turetta, R., Pavan, P., Collini, A., Chantre, A., Marty, A., Canali, C., Zanoni, E.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 341 KB

english, 1993

37

[IEEE 2001 IEEE Nuclear Science Symposium Conference Record - San Diego, CA, USA (4-10 Nov. 2001)] 2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310) - An "all-p-type" termination structure for silicon microstrip detectors

Dalla Betta, G.-F., Boscardin, M., Bosisio, L., Dittongo, S., Gregori, P., Rachevskaia, I., Verzellesi, G., Zorzi, N.

Year:

2002

Language:

english

File:

PDF, 316 KB

english, 2002

38

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Pradeepkumar, Aiswarya, Zielinski, Marcin, Bosi, Matteo, Verzellesi, Giovanni, Gaskill, D. Kurt, Iacopi, Francesca

Journal:

Journal of Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.28 MB

english, 2018

39

3D Detectors on Hydrogenated Amorphous Silicon for particle tracking in high radiation environment

Menichelli, M, Boscardin, M, Crivellari, M, Davis, J, Dunand, S, FanÃ², L, Moscatelli, F, Movileanu-Ionica, M, Petasecca, M, Piccini, M, Rossi, A, Scorzoni, A, Verzellesi, G, Wyrsch, N

Journal:

Journal of Physics Conference Series

Year:

2020

File:

PDF, 949 KB

2020

40

SPIE Proceedings [SPIE SPIE Optical Engineering + Applications - San Diego, California, United States (Sunday 9 August 2015)] Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems - Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

Kane, Matthew H., Jiao, Jianzhong, Dietz, Nikolaus, Huang, Jian-Jang, Mandurrino, M., Goano, M., Dominici, S., Vallone, M., Bertazzi, F., Ghione, G., Bernabei, M., Rovati, L., Verzellesi, G., Meneghin

Year:

2015

Language:

english

File:

PDF, 554 KB

english, 2015

41

[IEEE 1997 IEEE Nuclear Science Symposium Conference Record - Albuquerque, NM, USA (9-15 Nov. 1997)] 1997 IEEE Nuclear Science Symposium Conference Record - Study of breakdown effects in silicon multi-guard structures

Bacchetta, N., Della Betta, G.-F., Da Rold, M., Dell'Orso, R., Fuochi, P.G., Lanza, A., Messineo, A., Militaru, O., Paccagnella, A., Verzellesi, G., Wheadon, R.

Year:

1997

Language:

english

File:

PDF, 445 KB

english, 1997

42

[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Reliability and modeling: What to simulate and how?

Zhang, Rui, Yang, Kexin, Metaev, Elnatan, Pesic, Milan, Lloyd, Jim, Ring, Matt, Paliwoda, Peter, Tan, Sheldon, Young, Chadwin, Verzellesi, Giovanni, Puzzilli, Giuseppina, Puschkarsky, Katja, LaRow, Ch

Year:

2017

File:

PDF, 62 KB

2017

43

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

N. Bacchetta, D. Bisello, A. Candelori, M.Da Rold, M. Descovich, A. Kaminski, A. Messineo, F. Rizzo, G. Verzellesi

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2001

Language:

english

File:

PDF, 143 KB

english, 2001

44

Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays

F. Nava, E. Vittone, P. Vanni, G. Verzellesi, P.G. Fuochi, C. Lanzieri, M. Glaser

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2003

Language:

english

File:

PDF, 235 KB

english, 2003

45

Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

Faqir, M., Verzellesi, G., Meneghesso, G., Zanoni, E., Fantini, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 428 KB

english, 2008

46

[IEEE 1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference - San Francisco, CA, USA (31 Oct.-6 Nov. 1993)] 1993 IEEE Conference Record Nuclear Science Symposium and Medical Imaging Conference - Punch-through Behaviour Of FOXFET Biased Detectors

Bacchetta, N., Bisello, D., Da Ros, R., Giraldo, A., Gotra, Y., Paccagnella, A., Verzellesi, G.

Year:

1993

Language:

english

File:

PDF, 373 KB

english, 1993

47

[IEEE 1996 IEEE Nuclear Science Symposium. Conference Record - Anaheim, CA, USA (2-9 Nov. 1996)] 1996 IEEE Nuclear Science Symposium. Conference Record - Breakdown properties of multiguarded devices

Bacchetta, N., Bisello, D., Candelori, A., Dalla Betta, G.F., Da Re, A., Da Rold, M., Fardin, P., Paccagnella, A., Soncini, G., Verzellesi, G., Wheadon, R.

Year:

1996

Language:

english

File:

PDF, 683 KB

english, 1996

48

Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes

G. Verzellesi, G.-F. Dalla Betta, M. Boscardin, G.U. Pignatel, L. Bosisio

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2002

Language:

english

File:

PDF, 203 KB

english, 2002

49

[IEEE 2008 IEEE Instrumentation and Measurement Technology Conference - I2MTC 2008 - Victoria, BC, Canada (2008.05.12-2008.05.15)] 2008 IEEE Instrumentation and Measurement Technology Conference - Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics

Rovati, L., Verzellesi, G., Bonaiuti, M., Batignani, G., Bosisio, L., Betta, G.-F. Dalla, Giacomini, G., Piemonte, C., Zorzi, N.

Year:

2008

Language:

english

File:

PDF, 2.91 MB

english, 2008

50

Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs–GaAs HFETs

Verzellesi, G., Basile, A., Mazzanti, A., Cavallini, A., Canali, C.

Journal:

Electronics Letters

Year:

2003

Language:

english

File:

PDF, 74 KB

english, 2003

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